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1. product profile 1.1 general description 200 w ldmos power transistor for s-band radar applications in the frequency range from 2700 mhz to 3000 mhz. [1] t p =300 ? s; ? =10%; i dq =100ma [2] t p = 3000 ? s; ? =20%; i dq =50ma [3] t p =500 ? s; ? =20%; i dq =50ma 1.2 features and benefits ? high efficiency ? excellent ruggedness ? designed for broadband operation ? excellent thermal stability ? easy power control ? integrated esd protection ? high flexibility with resp ect to pulse formats ? internally matched for ease of use ? compliant to directive 2002/ 95/ec, regarding restriction of hazardous substances (rohs) 1.3 applications ? s-band radar applications in the frequency range 2700 mhz to 3000 mhz BLS7G2730L-200P; bls7g2730ls-200p ldmos s-band radar power transistor rev. 3 ? 12 july 2013 product data sheet table 1. typical performance typical rf performance at t case =25 ? c. test signal f v ds p l g p ? d t r t f (ghz) (v) (w) (db) (%) (ns) (ns) class-ab production test circuit pulsed rf [1] 2.7 to 3.0 32 200 12 48 8 5 application circuit pulsed rf [2] 2.7 to 3.0 32 220 12.5 50 20 6 pulsed rf [3] 2.9 to 3.1 32 220 12.5 50 20 6
BLS7G2730L-200P_ls-200p all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights re served. product data sheet rev. 3 ? 12 july 2013 2 of 15 nxp semiconductors bls7g2730l(s)-200p ldmos s-band radar power transistor 2. pinning information [1] connected to flange. 3. ordering information 4. limiting values [1] continuous use at maximum temperature will affect the reliability. table 2. pinning pin description simplified outline graphic symbol BLS7G2730L-200P (sot539a) 1drain1 2drain2 3gate1 4gate2 5source [1] bls7g2730ls-200p (sot539b) 1drain1 2drain2 3gate1 4gate2 5source [1] 5 12 43 4 3 5 1 2 sym117 5 12 43 4 3 5 1 2 sym117 table 3. ordering information type number package name description version BLS7G2730L-200P - flanged balanced ceramic package; 2 mounting holes; 4 leads sot539a bls7g2730ls-200p - earless flanged balanced ceramic package; 4 leads sot539b table 4. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter min max unit v ds drain-source voltage - 65 v v gs gate-source voltage ? 0.5 +13 v t stg storage temperature ? 65 +150 ?c t j junction temperature [1] - 225 ?c
BLS7G2730L-200P_ls-200p all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights re served. product data sheet rev. 3 ? 12 july 2013 3 of 15 nxp semiconductors bls7g2730l(s)-200p ldmos s-band radar power transistor 5. thermal characteristics 6. characteristics 7. test information 7.1 ruggedness in class-ab operation the BLS7G2730L-200P and bls7g2730ls-200p are capable of withstanding a load mismatch corresponding to vswr = 10 : 1 through all phases under following conditions: v ds =32v; i dq =100ma; p l = 200 w; f = 2700 mhz; t p =300 ? s; ? =10% table 5. thermal characteristics symbol parameter conditions typ unit z th(j-c) transient thermal impedance from junction to case t case =85 ? c; p l =200w t p = 300 ? s; ? = 10 % 0.13 k/w t p = 3000 ? s; ? = 20 % 0.19 k/w table 6. dc characteristics t j =25 ? c unless otherwise specified. symbol parameter conditions min typ max unit v (br)dss drain-source breakdown voltage v gs =0v; i d =1.2ma65--v v gs(th) gate-source threshold voltage v ds = 10 v; i d = 120 ma 1.5 1.9 2.3 v i dss drain leakage current v gs =0v; v ds =28v--2.8 ? a i dsx drain cut-off current v gs =v gs(th) + 3.75 v; v ds =10v -22.5-a i gss gate leakage current v gs =11v; v ds = 0 v - - 280 na g fs forward transconductance v ds =10v; i d =0.12a-1-s r ds(on) drain-source on-state resistance v gs =v gs(th) + 3.75 v; i d =4.2a -0.13- ? table 7. rf characteristics test signal: pulsed rf; t p = 300 ? s; ? = 10 %; rf performance at v ds =32v; i dq = 100 ma; t case =25 ? c; unless otherwise specified, in a class-ab production test circuit. symbol parameter conditions min typ max unit g p power gain p l = 200 w 9.8 12 - db rl in input return loss p l =200w - ? 10 ? 6db ? d drain efficiency p l =200w 43 48 - % p droop(pulse) pulse droop power p l =200w - 0 0.25 db t r rise time p l =200w - 8 50 ns t f fall time p l =200w - 5 50 ns
BLS7G2730L-200P_ls-200p all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights re served. product data sheet rev. 3 ? 12 july 2013 4 of 15 nxp semiconductors bls7g2730l(s)-200p ldmos s-band radar power transistor 7.2 impedance information [1] z s and z l defined in figure 1 . 7.3 production test circuit table 8. typical impedance measured load-pull data half device; v ds = 32 v; i dq = 100 ma. f z s [1] z l [1] (mhz) (? ) (? ) 2700 2.0 ? j5.8 3.7 ? j6.4 2800 1.6 ? j5.9 3.8 ? j6.9 2900 2.6 ? j6.2 3.8 ? j6.9 3000 3.4 ? j6.0 3.7 ? j6.4 fig 1. definition of transistor impedance 001aaf059 drain z l z s gate printed-circuit board (pcb): arlo n tc600 with a thickness of 0.64 mm. see table 9 for a list of components. fig 2. component layout for a class-ab production test circuit & & & & & & & & & 5 & & & & & 5 & & & pp pp pp ddd
BLS7G2730L-200P_ls-200p all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights re served. product data sheet rev. 3 ? 12 july 2013 5 of 15 nxp semiconductors bls7g2730l(s)-200p ldmos s-band radar power transistor [1] american technical ce ramics type 600f or capacitor of same quality. [2] murata or capacitor of same quality. [3] vishay dale or capacitor of same quality. 7.4 application circuit [1] american technical ce ramics type 600f or capacitor of same quality. [2] murata or capacitor of same quality. [3] vishay dale or capacitor of same quality. table 9. list of components test circuit see figure 2 . component description value remarks c1, c3, c6, c9, c13, c15 multilayer ceramic chip capacitor 18 pf [1] atc600f c2, c5, c10, c16 multilayer ceramic chip capacitor 1 ? f [2] c4, c7, c8, c14 multilayer ce ramic chip capacitor 12 pf [1] atc600f c11, c17 multilayer cera mic chip capacitor 10 ? f [2] c12 electrolytic capacitor 2200 ? f, 6 3 v r1, r2 chip resistor 9.1 ? [3] printed-circuit board (pcb): arlo n tc600 with a thickness of 0.64 mm. see table 10 for a list of components. fig 3. component layout for a class-ab application circuit table 10. list of components application circuit see figure 2 . component description value remarks c1, c3, c5, c6, c7, c8 multilayer ceramic chip capacitor 12 pf [1] atc600f c2, c4 multilayer ceramic chip capacitor 1 ? f [2] c9, c10 electrolytic capacitor 2200 ? f, 5 0 v r1, r2 chip resistor 50 ? [3] ddd & & 5 & & & & 5 & & & & pp pp pp
BLS7G2730L-200P_ls-200p all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights re served. product data sheet rev. 3 ? 12 july 2013 6 of 15 nxp semiconductors bls7g2730l(s)-200p ldmos s-band radar power transistor 7.5 graphical data 7.5.1 test circuit v ds =32v; i dq = 100 ma; t p = 300 ? s; ? =10%. (1) f = 2700 mhz (2) f = 2800 mhz (3) f = 2850 mhz (4) f = 2900 mhz (5) f = 3000 mhz v ds =32v; i dq = 100 ma; t p = 300 ? s; ? =10%. (1) f = 2700 mhz (2) f = 2800 mhz (3) f = 2850 mhz (4) f = 2900 mhz (5) f = 3000 mhz fig 4. output power as a function of input power; typical values fig 5. power gain as a function of output power; typical values ddd 3 l : 3 / 3 / : : : ddd 3 / : * s * s g% g% g%
BLS7G2730L-200P_ls-200p all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights re served. product data sheet rev. 3 ? 12 july 2013 7 of 15 nxp semiconductors bls7g2730l(s)-200p ldmos s-band radar power transistor v ds =32v; i dq = 100 ma; t p = 300 ? s; ? = 10 %. (1) f = 2700 mhz (2) f = 2800 mhz (3) f = 2850 mhz (4) f = 2900 mhz (5) f = 3000 mhz v ds =32v; p l = 200 w; i dq = 100 ma; t p = 300 ? s; ? =10%. fig 6. drain efficiency as a function of output power; typical values fig 7. power gain and drain efficiency as function of frequency; typical values v ds =32v; p l =200w; i dq = 100 ma; t p = 300 ? s; ? =10%. fig 8. input return loss as a function of frequency; typical values ddd 3 / : ' ' ddd i0+] * s * s g% g% g% ' ' * s * s ' ' ddd i0+] 5/ 5/ lq lq 5/ lq g% g% g%
BLS7G2730L-200P_ls-200p all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights re served. product data sheet rev. 3 ? 12 july 2013 8 of 15 nxp semiconductors bls7g2730l(s)-200p ldmos s-band radar power transistor 7.5.2 application circuit v ds =32v; i dq =50ma; t p = 3000 ? s; ? =20%. (1) f = 2700 mhz (2) f = 2800 mhz (3) f = 2850 mhz (4) f = 2900 mhz (5) f = 3000 mhz v ds =32v; i dq =50ma; t p = 3000 ? s; ? =20%. (1) f = 2700 mhz (2) f = 2800 mhz (3) f = 2850 mhz (4) f = 2900 mhz (5) f = 3000 mhz fig 9. output power as a function of input power; typical values fig 10. power gain as a function of output power; typical values ddd 3 l : 3 / 3 / : : : ddd 3 / : * s * s g% g% g%
BLS7G2730L-200P_ls-200p all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights re served. product data sheet rev. 3 ? 12 july 2013 9 of 15 nxp semiconductors bls7g2730l(s)-200p ldmos s-band radar power transistor v ds =32v; i dq =50ma; t p = 3000 ? s; ? =20%. (1) f = 2700 mhz (2) f = 2800 mhz (3) f = 2850 mhz (4) f = 2900 mhz (5) f = 3000 mhz v ds =32v; p l = 220 w; i dq =50ma; t p = 3000 ? s; ? =20%. fig 11. drain efficiency as a function of output power; typical values fig 12. power gain and drain efficiency as function of frequency; typical values v ds =32v; p l =220w; i dq =50ma; t p = 3000 ? s; ? =20%. fig 13. input return loss as a function of frequency; typical values ddd 3 / : ' ' ddd i0+] * s * s g% g% g% ' ' * s * s ' ' ddd i0+] 5/ 5/ lq lq 5/ lq g% g% g%
BLS7G2730L-200P_ls-200p all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights re served. product data sheet rev. 3 ? 12 july 2013 10 of 15 nxp semiconductors bls7g2730l(s)-200p ldmos s-band radar power transistor 8. package outline fig 14. package outline sot539a references outline version european projection issue date iec jedec eiaj sot539a 12-05-02 10-02-02 0 5 10 mm scale p a f b e d u 2 l h q c 5 12 4 3 d 1 e a w 1 ab m m m q u 1 h 1 c b m m w 2 c e 1 m w 3 unit a mm d b 11.81 11.56 0.18 0.10 31.55 30.94 13.72 9.53 9.27 17.12 16.10 10.29 10.03 4.7 4.2 c e u 2 0.25 0.25 0.51 w 3 35.56 qw 2 w 1 f 1.75 1.50 u 1 41.28 41.02 h 1 25.53 25.27 p 3.30 3.05 q 2.26 2.01 ee 1 9.50 9.30 inches 0.465 0.455 0.007 0.004 1.242 1.218 d 1 31.52 30.96 1.241 1.219 0.540 0.375 0.365 0.674 0.634 0.405 0.395 0.185 0.165 0.010 0.010 0.020 1.400 0.069 0.059 1.625 1.615 1.005 0.995 0.130 0.120 0.089 0.079 0.374 0.366 h 3.48 2.97 0.137 0.117 l dimensions (millimetre dimensions are derived from the original inch dimensions) flanged balanced ceramic package; 2 mounting holes; 4 leads sot539a note 1. millimeter dimensions are derived from the original inch dimensions. 2. recommended screw pitch dimension of 1.52 inch (38.6 mm) based on m3 screw.
BLS7G2730L-200P_ls-200p all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights re served. product data sheet rev. 3 ? 12 july 2013 11 of 15 nxp semiconductors bls7g2730l(s)-200p ldmos s-band radar power transistor fig 15. package outline sot539b references outline version european projection issue date iec jedec jeita sot539b sot539b_po 12-05-02 13-05-24 unit (1) mm max nom min 4.7 4.2 11.81 11.56 31.55 30.94 31.52 30.96 9.5 9.3 9.53 9.27 1.75 1.50 17.12 16.10 3.48 2.97 10.29 10.03 0.25 a dimensions earless flanged balanced ceramic package; 4 leads sot539b bc 0.18 0.10 dd 1 ee 1 e 13.72 fhh 1 25.53 25.27 lq 2.26 2.01 u 1 32.39 32.13 u 2 w 2 0.25 inches max nom min 0.185 0.165 0.465 0.455 1.242 1.218 1.241 1.219 0.374 0.366 0.375 0.365 0.069 0.059 0.674 0.634 0.137 0.117 0.405 0.395 0.01 0.007 0.004 0.54 1.005 0.995 0.089 0.079 1.275 1.265 0.01 w 3 0 5 10 mm scale c e q e 1 e h l b h 1 u 1 u 2 d w 2 w 3 1 2 3 4 d d a f d 1 5 note 1. millimeter dimensions are derived from the original inch dimensions.
BLS7G2730L-200P_ls-200p all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights re served. product data sheet rev. 3 ? 12 july 2013 12 of 15 nxp semiconductors bls7g2730l(s)-200p ldmos s-band radar power transistor 9. handling information 10. abbreviations 11. revision history caution this device is sensitive to electrostatic di scharge (esd). observe precautions for handling electrostatic sensitive devices. such precautions are described in the ansi/esd s20.20 , iec/st 61340-5 , jesd625-a or equivalent standards. table 11. abbreviations acronym description esd electrostatic discharge ldmos laterally diffused metal-oxide semiconductor s-band short wave band vswr voltage standing-wave ratio table 12. revision history document id release date data sheet status change notice supersedes bls7g2730s-200p_ls-200p v.3 20130712 product data sheet - bls7g2730s-200p_ls-200p v.2 modifications: ? the package outline figure 15 is updated. bls7g2730s-200p_ls-200p v.2 20130603 product data sheet - bls7g2730s-200p_ls-200p v.1 modifications ? table 1 on page 1: table has been updated ? section 1.2 on page 1: section has been updated ? table 4 on page 2: table has been updated ? table 5 on page 3: table has been updated ? table 6 on page 3: table has been updated ? table 7 on page 3: table has been updated ? section 7 on page 3: section has been added ? figure 15 on page 11: figure has been updated bls7g2730s-200p_ls-200p v.1 20130129 objective data sheet - -
BLS7G2730L-200P_ls-200p all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights re served. product data sheet rev. 3 ? 12 july 2013 13 of 15 nxp semiconductors bls7g2730l(s)-200p ldmos s-band radar power transistor 12. legal information 12.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term ?short data sheet? is explained in section ?definitions?. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple device s. the latest product status information is available on the internet at url http://www.nxp.com . 12.2 definitions draft ? the document is a draft versi on only. the content is still under internal review and subject to formal approval, which may result in modifications or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall hav e no liability for the consequences of use of such information. short data sheet ? a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request vi a the local nxp semiconductors sales office. in case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. product specification ? the information and data provided in a product data sheet shall define the specification of the product as agreed between nxp semiconductors and its customer , unless nxp semiconductors and customer have explicitly agreed otherwis e in writing. in no event however, shall an agreement be valid in which the nxp semiconductors product is deemed to offer functions and qualities beyond those described in the product data sheet. 12.3 disclaimers limited warranty and liability ? information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such info rmation. nxp semiconductors takes no responsibility for the content in this document if provided by an information source outside of nxp semiconductors. in no event shall nxp semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. notwithstanding any damages that customer might incur for any reason whatsoever, nxp semiconductors? aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the terms and conditions of commercial sale of nxp semiconductors. right to make changes ? nxp semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use ? nxp semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors and its suppliers accept no liability for inclusion and/or use of nxp semiconducto rs products in such equipment or applications and therefore such inclusion and/or use is at the customer?s own risk. applications ? applications that are described herein for any of these products are for illustrative purpos es only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. customers are responsible for the design and operation of their applications and products using nxp semiconductors products, and nxp semiconductors accepts no liability for any assistance with applications or customer product design. it is customer?s sole responsibility to determine whether the nxp semiconductors product is suitable and fit for the customer?s applications and products planned, as well as fo r the planned application and use of customer?s third party customer(s). customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. nxp semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer?s applications or products, or the application or use by customer?s third party customer(s). customer is responsible for doing all necessary testing for the customer?s applic ations and products using nxp semiconductors products in order to av oid a default of the applications and the products or of the application or use by customer?s third party customer(s). nxp does not accept any liability in this respect. limiting values ? stress above one or more limiting values (as defined in the absolute maximum ratings system of iec 60134) will cause permanent damage to the device. limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the recommended operating conditions section (if present) or the characteristics sections of this document is not warranted. constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. terms and conditions of commercial sale ? nxp semiconductors products are sold subject to the gener al terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms , unless otherwise agreed in a valid written individual agreement. in case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. nxp semiconductors hereby expressly objects to applying the customer?s general terms and conditions with regard to the purchase of nxp semiconducto rs products by customer. no offer to sell or license ? nothing in this document may be interpreted or construed as an offer to sell products t hat is open for acceptance or the grant, conveyance or implication of any lic ense under any copyrights, patents or other industrial or intellectual property rights. document status [1] [2] product status [3] definition objective [short] data sheet development this document contains data from the objecti ve specification for product development. preliminary [short] data sheet qualification this document contains data from the preliminary specification. product [short] data sheet production this document contains the product specification.
BLS7G2730L-200P_ls-200p all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights re served. product data sheet rev. 3 ? 12 july 2013 14 of 15 nxp semiconductors bls7g2730l(s)-200p ldmos s-band radar power transistor export control ? this document as well as the item(s) described herein may be subject to export control regu lations. export might require a prior authorization from competent authorities. non-automotive qualified products ? unless this data sheet expressly states that this specific nxp semicon ductors product is automotive qualified, the product is not suitable for automotive use. it is neither qualified nor tested in accordance with automotive testing or application requirements. nxp semiconductors accepts no liabili ty for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. in the event that customer uses t he product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without nxp semiconductors? warranty of the product for such automotive applicat ions, use and specifications, and (b) whenever customer uses the product for automotive applications beyond nxp semiconductors? specifications such use shall be solely at customer?s own risk, and (c) customer fully indemnifies nxp semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive app lications beyond nxp semiconductors? standard warranty and nxp semiconduct ors? product specifications. translations ? a non-english (translated) version of a document is for reference only. the english version shall prevail in case of any discrepancy between the translated and english versions. 12.4 trademarks notice: all referenced brands, produc t names, service names and trademarks are the property of their respective owners. 13. contact information for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com
nxp semiconductors bls7g2730l(s)-200p ldmos s-band radar power transistor ? nxp b.v. 2013. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please se nd an email to: salesaddresses@nxp.com date of release: 12 july 2013 document identifier: BLS7G2730L-200P_ls-200p please be aware that important notices concerning this document and the product(s) described herein, have been included in section ?legal information?. 14. contents 1 product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 general description . . . . . . . . . . . . . . . . . . . . . 1 1.2 features and benefits . . . . . . . . . . . . . . . . . . . . 1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 2 pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 thermal characteristics . . . . . . . . . . . . . . . . . . 3 6 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 7 test information . . . . . . . . . . . . . . . . . . . . . . . . . 3 7.1 ruggedness in class-ab operation . . . . . . . . . 3 7.2 impedance information . . . . . . . . . . . . . . . . . . . 4 7.3 production test circuit . . . . . . . . . . . . . . . . . . . . 4 7.4 application circuit . . . . . . . . . . . . . . . . . . . . . . . 5 7.5 graphical data . . . . . . . . . . . . . . . . . . . . . . . . . 6 7.5.1 test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 7.5.2 application circuit . . . . . . . . . . . . . . . . . . . . . . . 8 8 package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 9 handling information. . . . . . . . . . . . . . . . . . . . 12 10 abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 12 11 revision history . . . . . . . . . . . . . . . . . . . . . . . . 12 12 legal information. . . . . . . . . . . . . . . . . . . . . . . 13 12.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . 13 12.2 definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 12.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 12.4 trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 14 13 contact information. . . . . . . . . . . . . . . . . . . . . 14 14 contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

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